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As the voice of the global semiconductor industry, the Global Semiconductor Alliance (Global Semiconductor Alliance; hereinafter referred to as GSA) is hosting the online 2021 Global Semiconductor Alliance Storage Summit (GMC) today. The theme of this conference is "Building a Digital Future."

In his speech, Jin-Man Han, executive vice president of Samsung Electronics and head of global storage sales and marketing, said that the diversified use of data and the surge in demand have made storage more and more important.

The outbreak of the epidemic has affected people's lives in many ways. We have gradually adapted to the epidemic, using technology and new ways to work and study, and even obtain medical assistance. Most of the technology will also be transferred back to the IT industry.

Jin-Man Han said that the storage industry has always focused on the needs of large capacity, high speed and high bandwidth. However, in order to meet the increasing demand, the storage industry will also need more innovation, and Samsung is also leading the industry change.

Jin-Man Han introduced Samsung's new breakthroughs in DRAM, NAND, storage computing and other fields. At the beginning of this year, Samsung launched the HBM-PIM technology for the first time in the AI ​​artificial intelligence market. The new architecture can provide more than twice the system performance and reduce power consumption by 71%. Compared with the von Neumann structure that uses separate processors and memory units to perform millions of complex data processing tasks, Samsung’s new technology puts DRAM-optimized AI engines in each memory bank (storage subunit) Inside, the processing power is directly brought to the location of data storage, thereby achieving parallel processing and minimizing data movement.

In order to strengthen server performance and further improve data center processing and computing speed, Samsung and Xilinx have joined forces to create SmartSSD computing storage drives. SmartSSD CSD integrates the Xilinx FPGA accelerator to reduce the limit of the server CPU to reduce the movement of data, which can reduce latency and power consumption, and accelerate the speed and efficiency of data processing.

The new DRAM module developed by Samsung based on the Compute Express Link (CXL) interface adopts the EDSFF size, which will enable the server system to significantly expand its memory capacity and bandwidth. The new module can expand the memory capacity to terabytes, reduce system latency caused by memory caching, and allow server system accelerator AI, machine learning, and high-performance computing workloads.

Samsung announced in March that it has successfully developed a single 512GB DDR5 module, using the High-K Metal Gate (HKMG) process, which can provide more than twice the performance of DDR4 memory, reaching 7200Mb/s. The new memory can be used in supercomputers, artificial intelligence operations, data analysis and other fields to ensure performance release.

Finally, Jin-Man Han said that Samsung is committed to green storage technology, reducing the carbon footprint of storage computing, and innovating for a more sustainable future.