Samsung imagwiritsa ntchito ukadaulo wa EUV pakupanga kwa DRAM kwa nthawi yoyamba

Malinga ndi ZDnet, Samsung yalengeza kuti yagwiritsa ntchito bwino ukadaulo wa EUV pakupanga ku DRAM.

Samsung yatumiza ma miliyoni 1nm DDR4 DRAM ma module opangidwa pogwiritsa ntchito njira ya EUV, ndipo adawunika makasitomala. Samsung idati kumaliza kumaliziraku kuyambitsa njira yopanga unyinji wama DRAM atsopano chaka chamawa.

Mzere wopanga wa SamsungV EUV-V2 yokha pa chomera cha Pyeongtaek iyamba kupanga ma module a DRAM mu theka lachiwiri la chaka. Chingwe chopanga chikuyembekezeka kutulutsa 4 mbadwo 10nm DDR5 ndi LPDDR5.

Ichi ndi chip china chomwe chimapangidwa ndi chomera cha Pyeongtaek kuwonjezera pa 7nm logic chips pogwiritsa ntchito ukadaulo wa EUV. Samsung ikuti tekinoloji ya EUV idzawonjezera kawiri magwiridwe antchito amtundu umodzi wa inchi 12.

Opanga ma semiconductor apadziko lonse monga Samsung, Intel ndi TSMC akuyembekezeka kukulitsa kugwiritsa ntchito ukadaulo wa EUV popanga chip. Samsung idanenanso kuti ikukonzekera kugwiritsa ntchito ukadaulo wa EUV kuti ipange tchipisi cha 3nm.